Diodes IncorporatedFCX591ATAGP BJT
Trans GP BJT PNP 40V 1A 1000mW 4-Pin(3+Tab) SOT-89 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.5 mm |
| Verpackungsbreite | 2.5 mm |
| Verpackungslänge | 4.5 mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-89 |
| 4 | |
| Leitungsform | Flat |
This specially engineered PNP FCX591ATA GP BJT from Diodes Zetex comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 1000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 7 V.
| EDA / CAD Models |