Diodes IncorporatedFMMT458TAGP BJT
Trans GP BJT NPN 400V 0.225A 500mW 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 400 | |
| 400 | |
| 7 | |
| 0.9@5mA@50mA | |
| 0.2@2mA@20mA|0.5@6mA@50mA | |
| 0.225 | |
| 100 | |
| 100@1mA@10V|100@50mA@10V|15@100mA@10V | |
| 500 | |
| 50(Min) | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.98 mm |
| Verpackungsbreite | 1.3 mm |
| Verpackungslänge | 2.9 mm |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
Diodes Zetex has the solution to your circuit's high-voltage requirements with their NPN FMMT458TA general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 500 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 400 V and a maximum emitter base voltage of 7 V.
| EDA / CAD Models |