Diodes IncorporatedFMMT493TAGP BJT

Trans GP BJT NPN 100V 1A 500mW 3-Pin SOT-23 T/R

Add switching and amplifying capabilities to your electronic circuit with this NPN FMMT493TA GP BJT from Diodes Zetex. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 500 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 7 V.

Import TariffMay apply to this part

Auf Lager: 10.950 Stück

Regional Inventory: 9.000

    Total234,30 €Price for 3000

    9.000 auf Lager: heute versandbereit

    • (3000)

      heute versandbereit

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      2430+
      Manufacturer Lead Time:
      8 Wochen
      Country Of origin:
      China
      • In Stock: 9.000 Stück
      • Price: 0,0781 €
    • Versand in vsl. 2 Tagen

      Ships from:
      Niederlande
      Date Code:
      2503+
      Manufacturer Lead Time:
      12 Wochen
      Country Of origin:
      China
      • In Stock: 1.950 Stück
      • Price: 0,1571 €