Diodes IncorporatedFMMT596TAGP BJT
Trans GP BJT PNP 200V 0.3A 500mW 3-Pin SOT-23 T/R
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 220 | |
| 200 | |
| 5 | |
| 0.2 | |
| 1@25mA@250mA | |
| -55 to 150 | |
| 0.2@10mA@100mA|0.35@25mA@250mA | |
| 0.3 | |
| 100 | |
| 100@100mA@10V|100@1mA@10V|35@400mA@10V|85@250mA@10V | |
| 500 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.98 |
| Verpackungsbreite | 1.3 |
| Verpackungslänge | 2.9 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
Diodes Zetex has the solution to your circuit's high-voltage requirements with their PNP FMMT596TA general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 500 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 200 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |