Diodes IncorporatedFMMT618TAGP BJT
Trans GP BJT NPN 20V 2.5A 806mW 3-Pin SOT-23 T/R
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 20 | |
| 20 | |
| 5 | |
| 1@50mA@2.5A | |
| 0.015@10mA@0.1A|0.15@10mA@1A|0.2@50mA@2.5A | |
| 2.5 | |
| 100 | |
| 100@6A@2V|200@10mA@2V|200@2A@2V|300@200mA@2V | |
| 625 | |
| 140(Typ) | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.98 |
| Verpackungsbreite | 1.3 |
| Verpackungslänge | 2.9 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
Add switching and amplifying capabilities to your electronic circuit with this NPN FMMT618TA GP BJT from Diodes Zetex. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 625 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 20 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |