Diodes IncorporatedFMMT6517TAGP BJT
Trans GP BJT NPN 350V 0.5A 350mW 3-Pin SOT-23 T/R
Compliant | |
EAR99 | |
Active | |
8541.21.00.95 | |
Automotive | No |
PPAP | No |
NPN | |
Bipolar Small Signal | |
Si | |
Single | |
1 | |
350 | |
350 | |
7 | |
0.85@2mA@20mA|0.8@1mA@10mA|0.9@3mA@30mA | |
0.35@2mA@20mA|0.3@1mA@10mA|0.5@3mA@30mA|1@5mA@50mA | |
0.5 | |
15@100mA@10V|20@1mA@10V|20@50mA@10V|30@10mA@10V|30@30mA@10V | |
350 | |
50(Min) | |
-55 | |
150 | |
Tape and Reel | |
Befestigung | Surface Mount |
Verpackungshöhe | 0.98 |
Verpackungsbreite | 1.3 |
Verpackungslänge | 2.9 |
Leiterplatte geändert | 3 |
Standard-Verpackungsname | SOT |
Lieferantenverpackung | SOT-23 |
3 | |
Leitungsform | Gull-wing |
This NPN FMMT6517TA general purpose bipolar junction transistor from Diodes Zetex is perfect for a circuit requiring high-current density and can operate in a high voltage range. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 330 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 350 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.