Diodes IncorporatedFZT1151ATAGP BJT
Trans GP BJT PNP 40V 3A 3000mW 4-Pin(3+Tab) SOT-223 T/R
EAR99 | |
Active | |
8541.29.00.95 | |
SVHC | Yes |
SVHC überschreitet Schwellenwert | Yes |
Automotive | No |
PPAP | No |
Befestigung | Surface Mount |
Verpackungshöhe | 1.6 mm |
Verpackungsbreite | 3.5 mm |
Verpackungslänge | 6.5 mm |
Leiterplatte geändert | 3 |
Tab | Tab |
Standard-Verpackungsname | SOT |
Lieferantenverpackung | SOT-223 |
4 | |
Leitungsform | Gull-wing |
Implement this versatile PNP FZT1151ATA GP BJT from Diodes Zetex into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 3000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 7 V.