Diodes IncorporatedFZT493TAGP BJT
Trans GP BJT NPN 100V 1A 3000mW 4-Pin(3+Tab) SOT-223 T/R
Compliant with Exemption | |
EAR99 | |
Active | |
8541.29.00.95 | |
SVHC | Yes |
SVHC überschreitet Schwellenwert | Yes |
Automotive | No |
PPAP | No |
NPN | |
Bipolar Power | |
Si | |
Single Dual Collector | |
1 | |
120 | |
100 | |
5 | |
1.15@100mA@1A | |
0.3@50mA@500mA|0.6@100mA@1A | |
1 | |
100@1mA@10V|100@250mA@10V|30@1A@10V|80@500mA@10V | |
2000 | |
150(Min) | |
-55 | |
150 | |
Tape and Reel | |
Befestigung | Surface Mount |
Verpackungshöhe | 1.6 |
Verpackungsbreite | 3.5 |
Verpackungslänge | 6.5 |
Leiterplatte geändert | 3 |
Tab | Tab |
Standard-Verpackungsname | SOT |
Lieferantenverpackung | SOT-223 |
4 | |
Leitungsform | Gull-wing |
Thanks to Diodes Zetex, your circuit can handle high levels of voltage using the NPN FZT493TA general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.