Diodes IncorporatedFZT593TAGP BJT
Trans GP BJT PNP 100V 1A 3000mW 4-Pin(3+Tab) SOT-223 T/R
Compliant with Exemption | |
EAR99 | |
Active | |
8541.29.00.95 | |
SVHC | Yes |
SVHC überschreitet Schwellenwert | Yes |
Automotive | No |
PPAP | No |
PNP | |
Bipolar Power | |
Si | |
Single Dual Collector | |
1 | |
120 | |
100 | |
7 | |
1.1@50mA@500mA | |
0.2@25mA@250mA|0.3@50mA@500mA | |
1 | |
100@1mA@5V|100@250mA@5V|100@500mA@5V|50@1A@5V | |
3000 | |
50(Min) | |
-55 | |
150 | |
Tape and Reel | |
Befestigung | Surface Mount |
Verpackungshöhe | 1.6 |
Verpackungsbreite | 3.5 |
Verpackungslänge | 6.5 |
Leiterplatte geändert | 3 |
Tab | Tab |
Standard-Verpackungsname | SOT |
Lieferantenverpackung | SOT-223 |
4 | |
Leitungsform | Gull-wing |
Diodes Zetex has the solution to your circuit's high-voltage requirements with their PNP FZT593TA general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.