Diodes IncorporatedFZT600BTADarlington BJT

Trans Darlington NPN 140V 2A 2000mW 4-Pin(3+Tab) SOT-223 T/R

Traditional transistors can produce low current gains. One of Diodes Zetex's NPN FZT600BTA Darlington transistors can provide you with the much higher values you need. This Darlington transistor array's maximum emitter base voltage is 10 V, while its maximum base emitter saturation voltage is 1.9@10mA@1A V. This product's maximum continuous DC collector current is 2 A, while its minimum DC current gain is 5000@50mA@10 V|10000@500mA@10V|5000@1A@10V. It has a maximum collector emitter saturation voltage of 1.1@5mA@0.5A|1.2@10mA@1A V. Its maximum power dissipation is 2000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 140 V and a maximum emitter base voltage of 10 V. This Darlington transistor array has an operating temperature range of -55 °C to 150 °C.

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Quantity Increments of 1000 Minimum 1000
  • Date Code:
    2347+
    Manufacturer Lead Time:
    8 Wochen
    Country Of origin:
    China
    • Price: 0,1953 €
    1. 1000+0,1953 €
    2. 2000+0,1930 €