Diodes IncorporatedFZT658TAGP BJT
Trans GP BJT NPN 400V 0.5A 3000mW 4-Pin(3+Tab) SOT-223 T/R
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single Dual Collector | |
| 1 | |
| 400 | |
| 400 | |
| 7 | |
| 0.9@10mA@100mA | |
| 0.25@5mA@50mA|0.3@1mA@20mA|0.5@10mA@100mA | |
| 0.5 | |
| 40@200mA@10V|50@100mA@5V|50@1mA@5V | |
| 3000 | |
| 50(Min) | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.6 |
| Verpackungsbreite | 3.5 |
| Verpackungslänge | 6.5 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-223 |
| 4 | |
| Leitungsform | Gull-wing |
Design various electronic circuits with this versatile NPN FZT658TA GP BJT from Diodes Zetex. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 3000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 400 V and a maximum emitter base voltage of 7 V.
| EDA / CAD Models |