Diodes IncorporatedFZT753TAGP BJT
Trans GP BJT PNP 100V 2A 3000mW 4-Pin(3+Tab) SOT-223 T/R
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Si | |
| Single Dual Collector | |
| 1 | |
| 120 | |
| 100 | |
| 5 | |
| 1.25@100mA@1A | |
| -55 to 150 | |
| 0.3@100mA@1A|0.5@200mA@2A | |
| 2 | |
| 100 | |
| 100@500mA@2V|25@2A@2V|55@1A@2V|70@50mA@2V | |
| 2000 | |
| 140(Typ) | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.6 |
| Verpackungsbreite | 3.5 |
| Verpackungslänge | 6.5 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-223 |
| 4 | |
| Leitungsform | Gull-wing |
If your circuit's specifications require a device that can handle high levels of voltage, Diodes Zetex's PNP FZT753TA general purpose bipolar junction transistor is for you. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 3000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |