Diodes IncorporatedFZT789AQTAGP BJT

Trans GP BJT PNP 25V 3A 3000mW Automotive AEC-Q101 4-Pin(3+Tab) SOT-223 T/R

Add switching and amplifying capabilities to your electronic circuit with this PNP FZT789AQTA GP BJT from Diodes Zetex. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 3000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It has a maximum collector emitter voltage of 25 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

5.000 Stück: Versand in vsl. 3 Tagen

    Total346,30 €Price for 1000

    • (1000)

      Versand in vsl. 3 Tagen

      Ships from:
      Niederlande
      Date Code:
      2427+
      Manufacturer Lead Time:
      12 Wochen
      Country Of origin:
      China
      • In Stock: 5.000 Stück
      • Price: 0,3463 €