Diodes IncorporatedFZT789ATAGP BJT
Trans GP BJT PNP 25V 3A 3000mW 4-Pin(3+Tab) SOT-223 T/R
EAR99 | |
Active | |
8541.29.00.95 | |
SVHC | Yes |
SVHC überschreitet Schwellenwert | Yes |
Automotive | No |
PPAP | No |
PNP | |
Bipolar Power | |
Si | |
Single Dual Collector | |
1 | |
30 | |
25 | |
7 | |
1@10mA@1A | |
-55 to 150 | |
0.25@10mA@1A|0.45@20mA@2A|0.5@100mA@3A | |
3 | |
100 | |
100@6A@2V|200@2A@2V|250@1A@2V|300@10mA@2V | |
3000 | |
-55 | |
150 | |
Tape and Reel | |
Automotive | |
Befestigung | Surface Mount |
Verpackungshöhe | 1.6 |
Verpackungsbreite | 3.5 |
Verpackungslänge | 6.5 |
Leiterplatte geändert | 3 |
Tab | Tab |
Standard-Verpackungsname | SOT |
Lieferantenverpackung | SOT-223 |
4 | |
Leitungsform | Gull-wing |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile PNP FZT789ATA GP BJT from Diodes Zetex. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 3000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It has a maximum collector emitter voltage of 25 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.