Diodes IncorporatedFZT790ATCGP BJT
Trans GP BJT PNP 40V 3A 2000mW 4-Pin(3+Tab) SOT-223 T/R
Compliant with Exemption | |
EAR99 | |
Active | |
8541.29.00.75 | |
SVHC | Yes |
SVHC überschreitet Schwellenwert | Yes |
Automotive | No |
PPAP | No |
PNP | |
Bipolar Power | |
Si | |
Single Dual Collector | |
1 | |
50 | |
40 | |
5 | |
1@10mA@1A | |
0.25@5mA@500mA|0.45@10mA@1A|0.75@50mA@2A | |
3 | |
100 | |
150@2A@2V|200@1A@2V|250@500mA@2V|300@10mA@2V | |
2000 | |
100(Min) | |
-55 | |
150 | |
Tape and Reel | |
Automotive | |
Befestigung | Surface Mount |
Verpackungshöhe | 1.6 |
Verpackungsbreite | 3.5 |
Verpackungslänge | 6.5 |
Leiterplatte geändert | 3 |
Tab | Tab |
Standard-Verpackungsname | SOT |
Lieferantenverpackung | SOT-223 |
4 | |
Leitungsform | Gull-wing |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile PNP FZT790ATC GP BJT from Diodes Zetex. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.