Diodes IncorporatedFZT849TAGP BJT
Trans GP BJT NPN 30V 7A 3000mW 4-Pin(3+Tab) SOT-223 T/R
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single Dual Collector | |
| 1 | |
| 80 | |
| 30 | |
| 7 | |
| 1.2@300mA@6A | |
| -55 to 150 | |
| 0.05@20mA@0.5A|0.11@20mA@1A|0.215@20mA@2A|0.35@300mA@6.5A | |
| 7 | |
| 50 | |
| 100@10mA@1V|100@1A@1V|100@7A@1V|30@20A@2V | |
| 3000 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.6 |
| Verpackungsbreite | 3.5 |
| Verpackungslänge | 6.5 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-223 |
| 4 | |
| Leitungsform | Gull-wing |
The versatility of this NPN FZT849TA GP BJT from Diodes Zetex makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 3000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |