Diodes IncorporatedFZT951TAGP BJT
Trans GP BJT PNP 60V 5A 3000mW 4-Pin(3+Tab) SOT-223 T/R
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Single Dual Collector | |
| 1 | |
| 100 | |
| 60 | |
| 7 | |
| 1.24@500mA@5A | |
| -55 to 150 | |
| 0.05@10mA@100mA|0.14@100mA@1A|0.21@200mA@2A|0.46@500mA@5A | |
| 5 | |
| 50 | |
| 100@10mA@1V|100@2A@1V|10@10A@1V|75@5A@1V | |
| 3000 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.6 |
| Verpackungsbreite | 3.5 |
| Verpackungslänge | 6.5 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-223 |
| 4 | |
| Leitungsform | Gull-wing |
If you require a general purpose BJT that can handle high voltages, then the PNP FZT951TA BJT, developed by Diodes Zetex, is for you. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 3000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |