Infineon Technologies AGIGP40N65H5XKSA1IGBT-Chip
Trans IGBT Chip N-CH 650V 74A 250W 3-Pin(3+Tab) TO-220 Tube
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| N | |
| Single | |
| 650 | |
| ±20 | |
| 1.654 | |
| 74 | |
| 0.1 | |
| 255 | |
| -40 | |
| 175 | |
| Tube | |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.25 |
| Verpackungsbreite | 4.4 |
| Verpackungslänge | 10 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220 |
| 3 | |
| Leitungsform | Through Hole |
This fast-switching IGP40N65H5XKSA1 IGBT transistor from Infineon Technologies will be perfect in your circuit. It has a maximum collector emitter voltage of 650 V. Its maximum power dissipation is 255000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has a minimum operating temperature of -40 °C and a maximum of 175 °C. It is made in a single configuration.
| EDA / CAD Models |