Infineon Technologies AGIGW15N120H3FKSA1IGBT-Chip
Trans IGBT Chip N-CH 1200V 30A 217W 3-Pin(3+Tab) TO-247 Tube
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Field Stop|Trench | |
| N | |
| Single | |
| 1200 | |
| ±20 | |
| 2.05 | |
| 30 | |
| 0.6 | |
| 217 | |
| -40 | |
| 175 | |
| Tube | |
| Befestigung | Through Hole |
| Verpackungshöhe | 21.1(Max) |
| Verpackungsbreite | 5.16(Max) |
| Verpackungslänge | 16.03(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247 |
| 3 | |
| Leitungsform | Through Hole |
You won't need to worry about any lagging in your circuit with this IGW15N120H3FKSA1 IGBT transistor from Infineon Technologies. Its maximum power dissipation is 217000 mW. It has a maximum collector emitter voltage of 1200 V. It is made in a single configuration. This IGBT transistor has an operating temperature range of -40 °C to 175 °C. This device utilizes field stop|trench technology.
| EDA / CAD Models |