Infineon Technologies AGIGW25T120FKSA1IGBT-Chip
Trans IGBT Chip N-CH 1200V 50A 190W 3-Pin(3+Tab) TO-247 Tube
| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| N | |
| Single | |
| 1200 | |
| ±20 | |
| 1.7 | |
| 50 | |
| 0.6 | |
| 190 | |
| -40 | |
| 150 | |
| Tube | |
| Befestigung | Through Hole |
| Verpackungshöhe | 20.9 |
| Verpackungsbreite | 5.3 |
| Verpackungslänge | 15.9 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247 |
| 3 | |
| Leitungsform | Through Hole |
Minimize the current at your gate with the IGW25T120FKSA1 IGBT transistor from Infineon Technologies. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 190000 mW. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -40 °C and a maximum of 150 °C.
| EDA / CAD Models |