Infineon Technologies AGIHW30N110R3FKSA1IGBT-Chip
Trans IGBT Chip N-CH 1100V 60A 333W 3-Pin(3+Tab) TO-247 Tube
| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| N | |
| Single | |
| 1100 | |
| ±20 | |
| 1.55 | |
| 60 | |
| 0.1 | |
| 333 | |
| -40 | |
| 175 | |
| Tube | |
| Befestigung | Through Hole |
| Verpackungshöhe | 21.1(Max) |
| Verpackungsbreite | 5.21(Max) |
| Verpackungslänge | 16.13(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO-247 |
| Lieferantenverpackung | TO-247 |
| 3 | |
| Leitungsform | Through Hole |
This IHW30N110R3FKSA1 IGBT transistor from Infineon Technologies is perfect if your circuit contains high currents passing through it. It has a maximum collector emitter voltage of 1100 V. Its maximum power dissipation is 333000 mW. It is made in a single configuration. This IGBT transistor has an operating temperature range of -40 °C to 175 °C.
| EDA / CAD Models |