Infineon Technologies AGIKA15N65H5XKSA1IGBT-Chip
Trans IGBT Chip N-CH 650V 14A 33.3W 3-Pin(3+Tab) TO-220FP Tube
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| N | |
| Single | |
| 650 | |
| ±20 | |
| 1.65 | |
| 14 | |
| 0.1 | |
| 33.3 | |
| -40 | |
| 175 | |
| Tube | |
| Befestigung | Through Hole |
| Verpackungshöhe | 16.15(Max) |
| Verpackungsbreite | 4.85(Max) |
| Verpackungslänge | 10.65(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220FP |
| 3 | |
| Leitungsform | Through Hole |
You can use this IKA15N65H5XKSA1 IGBT transistor from Infineon Technologies as an electronic switch. It has a maximum collector emitter voltage of 650 V. Its maximum power dissipation is 33300 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -40 °C and a maximum of 175 °C.
| EDA / CAD Models |