Infineon Technologies AGIKP08N65H5XKSA1IGBT-Chip
Trans IGBT Chip N-CH 650V 18A 70W 3-Pin(3+Tab) TO-220 Tube
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| N | |
| Single | |
| 650 | |
| ±20 | |
| 1.65 | |
| 18 | |
| 0.1 | |
| 70 | |
| -40 | |
| 175 | |
| Tube | |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.25 |
| Verpackungsbreite | 4.4 |
| Verpackungslänge | 10 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220 |
| 3 | |
| Leitungsform | Through Hole |
Use the IKP08N65H5XKSA1 IGBT transistor from Infineon Technologies as an electronic switch. It has a maximum collector emitter voltage of 650 V. Its maximum power dissipation is 70000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has an operating temperature range of -40 °C to 175 °C. It is made in a single configuration.
| EDA / CAD Models |