Infineon Technologies AGIKP10N60TXKSA1IGBT-Chip
Trans IGBT Chip N-CH 600V 24A 110W 3-Pin(3+Tab) TO-220AB Tube
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Unknown |
| PPAP | Unknown |
| N | |
| Single | |
| 600 | |
| ±20 | |
| 1.5 | |
| 24 | |
| 0.1 | |
| 110 | |
| -40 | |
| 175 | |
| Tube | |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.25 |
| Verpackungsbreite | 4.4 |
| Verpackungslänge | 10 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220AB |
| 3 | |
| Leitungsform | Through Hole |
Minimize the current at your gate with the IKP10N60TXKSA1 IGBT transistor from Infineon Technologies. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 110000 mW. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -40 °C and a maximum of 175 °C.
| EDA / CAD Models |