Infineon Technologies AGIKP15N60TXKSA1IGBT-Chip
Trans IGBT Chip N-CH 600V 26A 130W 3-Pin(3+Tab) TO-220AB Tube
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.25 |
| Verpackungsbreite | 4.4 |
| Verpackungslänge | 10 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220AB |
| 3 | |
| Leitungsform | Through Hole |
Minimize the current at your gate with the IKP15N60TXKSA1 IGBT transistor from Infineon Technologies. Its maximum power dissipation is 130000 mW. It has a maximum collector emitter voltage of 600 V. This IGBT transistor has an operating temperature range of -40 °C to 175 °C. It is made in a single configuration.
| EDA / CAD Models |