Infineon Technologies AGIKQ120N60TXKSA1IGBT-Chip
Trans IGBT Chip N-CH 600V 160A 833W 3-Pin(3+Tab) TO-247 Tube
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Befestigung | Through Hole |
| Verpackungshöhe | 21 |
| Verpackungsbreite | 5 |
| Verpackungslänge | 15.8 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247 |
| 3 | |
| Leitungsform | Through Hole |
You can use this IKQ120N60TXKSA1 IGBT transistor from Infineon Technologies as an electronic switch. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 833000 mW. This device is made with field stop|trench technology. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -40 °C and a maximum of 175 °C.
| EDA / CAD Models |