Infineon Technologies AGIKW25N120H3FKSA1IGBT-Chip
Trans IGBT Chip N-CH 1200V 50A 326W 3-Pin(3+Tab) TO-247 Tube
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 21.1(Max) |
| Verpackungsbreite | 5.16(Max) |
| Verpackungslänge | 16.03(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247 |
| 3 | |
| Leitungsform | Through Hole |
This IKW25N120H3FKSA1 IGBT transistor from Infineon Technologies is an electronic switch that can handle large currents with very little gate current drive. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 326000 mW. This IGBT transistor has a minimum operating temperature of -40 °C and a maximum of 175 °C. It is made in a single configuration.
| EDA / CAD Models |