Infineon Technologies AGIKW25T120FKSA1IGBT-Chip
Trans IGBT Chip N-CH 1200V 50A 190W 3-Pin(3+Tab) TO-247 Tube
| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 20.95 |
| Verpackungsbreite | 5.03 |
| Verpackungslänge | 15.9 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247 |
| 3 | |
| Leitungsform | Through Hole |
This IKW25T120FKSA1 IGBT transistor from Infineon Technologies is perfect if your circuit contains high currents passing through it. Its maximum power dissipation is 190000 mW. It has a maximum collector emitter voltage of 1200 V. This IGBT transistor has an operating temperature range of -40 °C to 150 °C. It is made in a single configuration.
| EDA / CAD Models |