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Infineon Technologies AGIKW40N120H3FKSA1IGBT-Chip
Trans IGBT Chip N-CH 1200V 80A 483W 3-Pin(3+Tab) TO-247 Tube
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Unknown |
| PPAP | Unknown |
| N | |
| Single | |
| 1200 | |
| ±20 | |
| 2.05 | |
| 80 | |
| 0.6 | |
| 483 | |
| -40 | |
| 175 | |
| Tube | |
| Befestigung | Through Hole |
| Verpackungshöhe | 21.1(Max) |
| Verpackungsbreite | 5.16(Max) |
| Verpackungslänge | 16.03(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247 |
| 3 | |
| Leitungsform | Through Hole |
Use the IKW40N120H3FKSA1 IGBT transistor from Infineon Technologies as an electronic switch. It has a maximum collector emitter voltage of 400 V. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This IGBT transistor has an operating temperature range of -40 °C to 150 °C. It is made in a single quad collector triple emitter configuration.
| EDA / CAD Models |