Infineon Technologies AGIKW40N65F5FKSA1IGBT-Chip

Trans IGBT Chip N-CH 650V 74A 255W 3-Pin(3+Tab) TO-247 Tube

The IKW40N65F5FKSA1 IGBT transistor from Infineon Technologies will work effectively even with higher currents. Its maximum power dissipation is 255000 mW. It has a maximum collector emitter voltage of 650 V. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has a minimum operating temperature of -40 °C and a maximum of 175 °C. It is made in a single configuration.

216 Stück: Versand in vsl. 3 Tagen

    Total1,71 €Price for 1

    • Versand in vsl. 3 Tagen

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      • In Stock: 216 Stück
      • Price: 1,7144 €