Infineon Technologies AGIKW40N65F5FKSA1IGBT-Chip
Trans IGBT Chip N-CH 650V 74A 255W 3-Pin(3+Tab) TO-247 Tube
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Trench Stop 5 | |
| N | |
| Single | |
| 650 | |
| ±20 | |
| 1.6 | |
| 74 | |
| 0.1 | |
| 255 | |
| -40 | |
| 175 | |
| Tube | |
| Befestigung | Through Hole |
| Verpackungshöhe | 20.95 |
| Verpackungsbreite | 5.03 |
| Verpackungslänge | 15.9 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247 |
| 3 | |
| Leitungsform | Through Hole |
The IKW40N65F5FKSA1 IGBT transistor from Infineon Technologies will work effectively even with higher currents. Its maximum power dissipation is 255000 mW. It has a maximum collector emitter voltage of 650 V. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has a minimum operating temperature of -40 °C and a maximum of 175 °C. It is made in a single configuration.
| EDA / CAD Models |