Infineon Technologies AGIKW40N65H5FKSA1IGBT-Chip
Trans IGBT Chip N-CH 650V 74A 250W 3-Pin(3+Tab) TO-247 Tube
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 21.1(Max) |
| Verpackungsbreite | 5.21(Max) |
| Verpackungslänge | 16.13(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247 |
| 3 | |
| Leitungsform | Through Hole |
The IKW40N65H5FKSA1 IGBT transistor from Infineon Technologies will work effectively even with higher currents. It has a maximum collector emitter voltage of 650 V. Its maximum power dissipation is 255000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -40 °C and a maximum of 175 °C.
| EDA / CAD Models |