Infineon Technologies AGIKW40T120FKSA1IGBT-Chip
Trans IGBT Chip N-CH 1200V 75A 270W 3-Pin(3+Tab) TO-247 Tube
| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Befestigung | Through Hole |
| Verpackungshöhe | 20.95 |
| Verpackungsbreite | 5.3 |
| Verpackungslänge | 15.9 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247 |
| 3 | |
| Leitungsform | Through Hole |
The IKW40T120FKSA1 IGBT transistor from Infineon Technologies is perfect to use as an electronic switch eliminating the current at the gate. Its maximum power dissipation is 270000 mW. It has a maximum collector emitter voltage of 1200 V. This IGBT transistor has a minimum operating temperature of -40 °C and a maximum of 150 °C. It is made in a single configuration.
| EDA / CAD Models |