Infineon Technologies AGIKW75N60H3FKSA1IGBT-Chip
Trans IGBT Chip N-CH 600V 80A 428W 3-Pin(3+Tab) TO-247 Tube
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 20.95 |
| Verpackungsbreite | 5.03 |
| Verpackungslänge | 15.9 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247 |
| 3 | |
| Leitungsform | Through Hole |
Don't be afraid to step up the amps in your device when using this IKW75N60H3FKSA1 IGBT transistor from Infineon Technologies. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 428000 mW. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -40 °C and a maximum of 175 °C.
| EDA / CAD Models |