Infineon Technologies AGIKZ50N65EH5XKSA1IGBT-Chip
Trans IGBT Chip N-CH 650V 85A 273W 4-Pin(4+Tab) TO-247 Tube
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 21 |
| Verpackungsbreite | 5 |
| Verpackungslänge | 15.8 |
| Leiterplatte geändert | 4 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247 |
| 4 | |
| Leitungsform | Through Hole |
This IKZ50N65EH5XKSA1 IGBT transistor from Infineon Technologies will work perfectly in your circuit. It has a maximum collector emitter voltage of 650 V. Its maximum power dissipation is 273000 mW. It is made in a single dual emitter configuration. This IGBT transistor has an operating temperature range of -40 °C to 175 °C. This device utilizes trench stop 5 technology.
| EDA / CAD Models |