Infineon Technologies AGIKZ50N65EH5XKSA1IGBT-Chip

Trans IGBT Chip N-CH 650V 85A 273W 4-Pin(4+Tab) TO-247 Tube

This IKZ50N65EH5XKSA1 IGBT transistor from Infineon Technologies will work perfectly in your circuit. It has a maximum collector emitter voltage of 650 V. Its maximum power dissipation is 273000 mW. It is made in a single dual emitter configuration. This IGBT transistor has an operating temperature range of -40 °C to 175 °C. This device utilizes trench stop 5 technology.

240 Stück: Versand in vsl. 3 Tagen

    Total4,90 €Price for 1

    • Versand in vsl. 3 Tagen

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      • In Stock: 240 Stück
      • Price: 4,8955 €