Infineon Technologies AGIKZ75N65EL5XKSA1IGBT-Chip
Trans IGBT Chip N-CH 650V 100A 536W 4-Pin(4+Tab) TO-247 Tube
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Trench Stop 5 | |
| N | |
| Single Dual Emitter | |
| 650 | |
| ±20 | |
| 1.1 | |
| 100 | |
| 0.1 | |
| 536 | |
| -40 | |
| 175 | |
| Tube | |
| Befestigung | Through Hole |
| Verpackungshöhe | 21.1(Max) |
| Verpackungsbreite | 5.21(Max) |
| Verpackungslänge | 16.13(Max) |
| Leiterplatte geändert | 4 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247 |
| 4 | |
| Leitungsform | Through Hole |
The IKZ75N65EL5XKSA1 IGBT transistor from Infineon Technologies will work effectively even with higher currents. Its maximum power dissipation is 536000 mW. It has a maximum collector emitter voltage of 650 V. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single dual emitter configuration. This device utilizes trench stop 5 technology. This IGBT transistor has an operating temperature range of -40 °C to 175 °C.
| EDA / CAD Models |