Infineon Technologies AGIPB019N06L3GATMA1
Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) D2PAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Befestigung | Surface Mount |
| Verpackungshöhe | 4.57(Max) mm |
| Verpackungsbreite | 9.45(Max) mm |
| Verpackungslänge | 10.31(Max) mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO-263 |
| Lieferantenverpackung | D2PAK |
| 3 | |
| Leitungsform | Gull-wing |
Amplify electronic signals and switch between them with the help of Infineon Technologies' IPB019N06L3GATMA1 power MOSFET. Its maximum power dissipation is 250000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos technology. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.
| EDA / CAD Models |