Infineon Technologies AGIPB026N06NATMA1

Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R

Use Infineon Technologies' IPB026N06NATMA1 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 3000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos technology.

905 Stück: heute versandbereit

    Total1,24 €Price for 1

    • Service Fee  6,28 €

      heute versandbereit

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      2237+
      Manufacturer Lead Time:
      18 Wochen
      Minimum Of :
      1
      Maximum Of:
      905
      Country Of origin:
      Deutschland
         
      • Price: 1,2439 €
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • heute versandbereit

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      2237+
      Manufacturer Lead Time:
      18 Wochen
      Country Of origin:
      Deutschland
      • In Stock: 905 Stück
      • Price: 1,2439 €