Infineon Technologies AGIPB027N10N3GATMA1

Trans MOSFET N-CH 100V 120A 3-Pin(2+Tab) D2PAK T/R

Thanks to Infineon Technologies, both your amplification and switching needs can be taken care of with one component: the IPB027N10N3GATMA1 power MOSFET. Its maximum power dissipation is 300000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with optimos technology.

Auf Lager: 18.492 Stück

Regional Inventory: 13.492

    Total4,57 €Price for 1

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      heute versandbereit

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      Date Code:
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      Manufacturer Lead Time:
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      Minimum Of :
      1
      Maximum Of:
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      Country Of origin:
      Südkorea
         
      • Price: 4,5708 €
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • heute versandbereit

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      2229+
      Manufacturer Lead Time:
      16 Wochen
      Country Of origin:
      Südkorea
      • In Stock: 492 Stück
      • Price: 4,5708 €
    • (1000)

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      Increment:
      1000
      Ships from:
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      Date Code:
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    • (1000)

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      Ships from:
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      Date Code:
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      Country Of origin:
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      • In Stock: 5.000 Stück
      • Price: 2,98 €