| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Befestigung | Screw |
| Verpackungsbreite | 25.42(Max) |
| Verpackungslänge | 38.23(Max) |
| Leiterplatte geändert | 4 |
| Lieferantenverpackung | SOT-227B |
| 4 |
This powerful and secure IXA60IF1200NA IGBT transistor from Ixys Corporation will make sure your circuit works properly. Its maximum power dissipation is 290000 mW. It has a maximum collector emitter voltage of 1200 V. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single dual emitter configuration. This device is made with xpt technology. This IGBT transistor has a minimum operating temperature of -40 °C and a maximum of 125 °C.
| EDA / CAD Models |