Compliant with Exemption | |
EAR99 | |
Active | |
SVHC | Yes |
SVHC ĂĽberschreitet Schwellenwert | Yes |
Automotive | No |
PPAP | No |
Befestigung | Through Hole |
Verpackungshöhe | 26.59(Max) |
Verpackungsbreite | 5.31(Max) |
Verpackungslänge | 20.29(Max) |
Leiterplatte geändert | 3 |
Tab | Tab |
Standard-Verpackungsname | TO |
Lieferantenverpackung | TO-264 |
3 |
Minimize the current at your gate with the IXBK55N300 IGBT transistor from Ixys Corporation. It has a maximum collector emitter voltage of 3000 V. Its maximum power dissipation is 625000 mW. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.