| Compliant with Exemption | |
| Active | |
| Automotive | No |
| PPAP | No |
| Befestigung | Screw |
| Verpackungsbreite | 25.42(Max) mm |
| Verpackungslänge | 38.23(Max) mm |
| Leiterplatte geändert | 4 |
| Lieferantenverpackung | SOT-227B |
| 4 |
The IXBN75N170A IGBT transistor from Ixys Corporation is perfect to use as an electronic switch eliminating the current at the gate. It has a maximum collector emitter voltage of 1700 V. Its maximum power dissipation is 500000 mW. It is made in a single dual emitter configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |