IXYSIXBT42N170IGBT-Chip

Trans IGBT Chip N-CH 1700V 80A 360W 3-Pin(2+Tab) TO-268

You can use this IXBT42N170 IGBT transistor from Ixys Corporation as an electronic switch. Its maximum power dissipation is 360000 mW. It has a maximum collector emitter voltage of 1700 V. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.

A datasheet is only available for this product at this time.