| RoHS EU | Compliant with Exemption |
| ECCN (USA) | EAR99 |
| Part Status | NRND |
| HTS | 8541.10.00.80 |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 21.46(Max) |
| Verpackungsbreite | 5.3(Max) |
| Verpackungslänge | 16.26(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247AD |
| Stiftanzahl | 3 |
Make an effective common gate amplifier using this IXFH6N100 power MOSFET from Ixys Corporation. Its maximum power dissipation is 180000 mW. This N channel MOSFET transistor operates in enhancement mode. This device is made with hiperfet technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
