Compliant with Exemption | |
EAR99 | |
Active | |
SVHC | Yes |
SVHC überschreitet Schwellenwert | Yes |
Automotive | No |
PPAP | No |
Befestigung | Surface Mount |
Verpackungshöhe | 4.83(Max) |
Verpackungsbreite | 9.4(Max) |
Verpackungslänge | 10.41(Max) |
Leiterplatte geändert | 2 |
Tab | Tab |
Standard-Verpackungsname | TO-263 |
Lieferantenverpackung | D2PAK |
3 | |
Leitungsform | Gull-wing |
The IXGA20N120A3 IGBT transistor from Ixys Corporation is perfect to use as an electronic switch eliminating the current at the gate. Its maximum power dissipation is 180000 mW. It has a maximum collector emitter voltage of 1200 V. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.