IXYSIXGH16N170IGBT-Chip

Trans IGBT Chip N-CH 1700V 32A 190W 3-Pin(3+Tab) TO-247AD

Minimize the current at your gate with the IXGH16N170 IGBT transistor from Ixys Corporation. Its maximum power dissipation is 190000 mW. It has a maximum collector emitter voltage of 1700 V. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.

A datasheet is only available for this product at this time.