IXYSIXGH25N160IGBT-Chip

Trans IGBT Chip N-CH 1600V 75A 300W 3-Pin(3+Tab) TO-247

This IXGH25N160 IGBT transistor from Ixys Corporation will work perfectly in your circuit. Its maximum power dissipation is 300000 mW. It has a maximum collector emitter voltage of 1600 V. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.

A datasheet is only available for this product at this time.