IXYSIXGH28N120BIGBT-Chip

Trans IGBT Chip N-CH 1200V 50A 250W 3-Pin(3+Tab) TO-247AD

The IXGH28N120B IGBT transistor from Ixys Corporation is perfect to use as an electronic switch eliminating the current at the gate. Its maximum power dissipation is 250000 mW. It has a maximum collector emitter voltage of 1200 V. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.

55 Stück: Versand in vsl. 10 Tagen

    Total94,01 €Price for 38

    • Versand in vsl. 10 Tagen

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      1831+
      Manufacturer Lead Time:
      0 Wochen
      Country Of origin:
      Südkorea
      • In Stock: 55 Stück
      • Price: 2,4739 €