| Compliant with Exemption | |
| EAR99 | |
| Active | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 21.46(Max) |
| Verpackungsbreite | 5.3(Max) |
| Verpackungslänge | 16.26(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247AD |
| 3 |
This powerful and secure IXGH50N90B2D1 IGBT transistor from Ixys Corporation will make sure your circuit works properly. It has a maximum collector emitter voltage of 900 V. Its maximum power dissipation is 400000 mW. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
| EDA / CAD Models |