IXYSIXGH6N170AIGBT-Chip

Trans IGBT Chip N-CH 1700V 6A 75W 3-Pin(3+Tab) TO-247AD

Minimize the current at your gate with the IXGH6N170A IGBT transistor from Ixys Corporation. Its maximum power dissipation is 75000 mW. It has a maximum collector emitter voltage of 1700 V. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.

A datasheet is only available for this product at this time.