| Compliant with Exemption | |
| EAR99 | |
| Active | |
| Automotive | No |
| PPAP | No |
| N | |
| Single Dual Emitter | |
| 1700 | |
| 2.5 | |
| ±20 | |
| 735 | |
| 160 | |
| 0.2 | |
| -55 | |
| 150 | |
| Befestigung | Screw |
| Verpackungsbreite | 25.42(Max) mm |
| Verpackungslänge | 38.23(Max) mm |
| Leiterplatte geändert | 4 |
| Lieferantenverpackung | SOT-227B |
| 4 |
This IXGN100N170 IGBT transistor from Ixys Corporation is perfect if your circuit contains high currents passing through it. Its maximum power dissipation is 735000 mW. It has a maximum collector emitter voltage of 1700 V. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single dual emitter configuration.
| EDA / CAD Models |